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Alexandre Savtchouk, Pittsburgh, US, N Euclid Ave, Unit 1
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Alexandre Savtchouk, 63, Tampa, US, Amberly Dr, Apt 932
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Alexandre Savtchouk, 63, Tampa, US, Bellflower Rd
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Network Profiles
mendeley-parser/electrical-and-electronic-engineering-n.csv at master...
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Alexandre Savtchouk Profile | Tampa | Basic Data Profile
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Alexandre Savtchouk, Florida Profile Pages, Born: January 16, 1952, Address: Bellflower Rd, Tampa, FL,Facebook: Click to View.
G Parada | AceMap
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S Olibet, V D Mihailetchi, Krisztian Kisszabo, G Parada, Ferenc Korsos, Alexandre Savtchouk, Marshall Wilson Recombination Via Point Defects and Their Complexes in Solar Silicon · http://doi.wiley.com pssa · Physica Status Solidi (a) - A R Peaker, V P Markevich, B Hamilton, G Parada, A Dudas, ...
Interests
Alexandre Savtchouk - Patents
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in the public domain by the USPTO (USPTO Patent Application #,Title): ...
Lubomir L. Jastrzebski - Patents
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Lubomir L. Jastrzebski patents ... Inventors: Alexandre Savtchouk, Jacek Lagowski, Lubomir L. Jastrzebski, Joseph Nicholas Kochey Archived*
Business Profiles
patentbuddy: Alexandre Savtchouk
SEMICONDUCTOR DIAGNOSTICS, INC., Tampa, FL, US
Education
QSS-μPCD measurement of lifetime in silicon wafers: advantages and...
journals.scholarsportal.info
Authors. Marshall Wilson · Alexandre Savtchouk · Jacek Lagowski · Krisztian Kis- Szabo · Ferenc Korsos · Atilla Toth · Radovan Kopecek · Valentin Mihailetchi ...
Books & Literature
Alexandre Savtchouk | XanEdu Customization Platform
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Author: Alexandre Savtchouk. Results. Band offset diagnostics of advanced dielectrics Springer Science+Business Media By: Piotr Edelman ...
- مقالات نوشته شده توسط Alexandre Savtchouk سایپرز، باشگاه د
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Drift characteristics of mobile ions in SiNx films and solar cells سال انتشار: Available online 4 July ژورنال: Solar Energy Materials and Solar Cells نویسنده ...
Alexandre Savtchouk - ECS Journal of Solid State Science and ...
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Analytical and Diagnostic Techniques for Semiconductor Materials,...
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NEW COCOS (CORONA OXIDE CHARACTERIZATION OF SEMICONDUCTOR) METHOD FOR MONITORING THE RELIABILITY OF THIN GATE OXIDES Marshall Wilson, Jacek Lagowski and Alexandre Savtchouk Semiconductor Diagnostics, Inc.; Spectrum Blvd. Ste. 130; Tampa, FL Lubek Jastrzebski and ...
Related Documents
Accurate measurement of excess carrier lifetime using carrier decay...
www.freepatentsonline.com
A method is described for accurate measuring of the excess carrier lifetime on a semiconductor sample from the carrier decay after termination of the...
EBSCOhost | | Accelerated Light-Induced Degradation (ALID)...
web.a.ebscohost.com
MARSHALL WILSON,1 PIOTR EDELMAN,1,2 ALEXANDRE SAVTCHOUK,1. JOHN D'AMICO,1 ANDREW FINDLAY,1 and JACEK LAGOWSKI1.
EBSCOhost | | Band offset diagnostics of advanced...
web.b.ebscohost.com
Band offset diagnostics of advanced dielectrics. Piotr Edelman Ж Marshall Wilson Ж John D'Amico Ж. Alexandre Savtchouk Ж Jacek Lagowski.
Manifestation of Cu Impurities on Silicon Surfaces, Implication for...
ma.ecsdl.org
Manifestation of Cu Impurities on Silicon Surfaces, Implication for Monitoring Cu Contamination. Marshall Wilson a, Alexandre Savtchouk a ...
Scientific Publications
Patents Assigned to Semiconductor Diagnostics, Inc. - Justia Patents...
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Justia - Patents - Patents and Patent Application Resources
Novel noncontact approach to monitoring the field-effect passivation...
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We report a comprehensive noncontact approach to measurement of the field-effect passivation of emitters for p and n-type base ... Alexandre Savtchouk a , Jacek
Energy Procedia | Proceedings of the SiliconPV Conference (1st...
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The online version of Energy Procedia at ScienceDirect.com, the world's leading platform for high quality peer-reviewed full-text journals.
Publications
Effect of Fe and Cu contamination on the reliability of ultrathin...
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Author(s): John D'Amico; Lubek Jastrzebski; Marshall Wilson; Alexandre Savtchouk Format Member Price Non-Member Price; PDF: $
Band offset diagnostics of advanced dielectrics | SpringerLink
link.springer.com
We present a non-contact electrical metrology of advanced dielectrics on silicon with an emphasis on monitoring the composition of mixed dielectrics such a
In-Line Methods and Monitors for Process and Yield Improvement |...
spie.org
Author(s): John D'Amico; Lubek Jastrzebski; Marshall Wilson; Alexandre Savtchouk. Defect-free IDDQ with reverse body bias. Author(s): ...
Accelerated Light-Induced Degradation (ALID) for Monitoring of...
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In crystalline silicon, above-bandgap illumination can transform defects into strong recombination centers, degrading minority-carrier lifetime and solar c
Miscellaneous
Alexandre Savtchouk | LinkedIn
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US B2 - Method and system for elevated temperature measurement...
patents.google.com
Techniques for measuring a contact potential difference of a sample at an elevated temperature using a probe designed for room temperature measurement...
Patent US Photoreactive surface processing - Google Patents
patents.google.com
US *, 1 Jul 2008, 12 Feb 2009, Kabushiki Kaisha Toshiba, Processing method, manufacturing method of semiconductor device, and processing apparatus. US *, 30 May 2008, 19 Feb 2009, Alexandre Savtchouk, Enhanced sensitivity non-contact electrical monitoring of copper contamination on ...
US B1 - Determining composition of mixed dielectrics
patents.google.com
Techniques for determining the composition of mixed dielectric layers are disclosed
ACCURATE MEASURING OF LONG STEADY STATE MINORITY CARRIER DIFFUSION...
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Patent application title: ACCURATE MEASURING OF LONG STEADY STATE MINORITY CARRIER DIFFUSION LENGTHS Inventors: Jacek Lagowski (Tampa, FL, US) Alexandre Savtchouk
US A - Photoreactive surface cleaning Google Patents
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US *, 30 May 2008, 19 Feb 2009, Alexandre Savtchouk, Enhanced sensitivity non-contact electrical monitoring of copper contamination on silicon ...
US A1 - Enhanced sensitivity non-contact electrical...
patents.google.com
Methods of measuring copper impurities on a silicon surface are disclosed. In certain embodiments, copper is electrically activated by ultra-violet...
US A1 - Method and apparatus for monitoring in-line copper...
patents.google.com
A method for determining copper contamination on a semiconductor wafer is disclosed. The minority carrier diffusion length is measured, then the wafer is...
Effect of Fe and Cu contamination on the reliability of ultrathin gate ...
www.spiedigitallibrary.org
John D'Amico, Lubek Jastrzebski, Marshall Wilson, Alexandre Savtchouk, "Effect of Fe and Cu contamination on the reliability of ultrathin gate oxides", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: ; http://dx.doi.org
Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity...
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Lifetime Analysis and Characterization: Marshall Wilson, Alexandre Savtchouk, Igor Tasarov, John D'Amico, Piotr Edelman, Nick Kochey, and Jacek Lagowski
ENHANCED SENSITIVITY NON-CONTACT ELECTRICAL MONITORING OF COPPER...
www.patentsencyclopedia.com
Patent application title: ENHANCED SENSITIVITY NON-CONTACT ELECTRICAL MONITORING OF COPPER CONTAMINATION ON SILICON SURFACE Inventors: Alexandre Savtchouk (Tampa, FL
US B2 - Accurate measuring of long steady state minority...
patents.google.com
Uitvinders, Jacek Lagowski, Alexandre Savtchouk, Marshall D. Wilson. Oorspronkelijke patenteigenaar, Semiconductor Diagnostics, Inc. Citatie exporteren ...
WO A1 - Surveillance électrique, sans contact et à...
patents.google.com
L'invention décrit des procédés permettant de mesurer les impuretés du cuivre sur une surface de silicium. Dans certains modes de réalisation, le cuivre...
Kelvin Force Microscopy and corona charging for semiconductor...
www.infona.pl
Kelvin Force Microscopy and corona charging for semiconductor material and device characterization. Dmitriy Marinskiy, Piotr Edelman, Jacek Lagowski, Thye Chong Loy, Carlos Almeida, Alexandre Savtchouk · Details · Contributors · Fields of science · Bibliography · Quotations · Similar · Collections ...
Non‐Contact C‐V Technique for high‐k Applications
scitation.aip.org
Piotr Edelman 1, Alexandre Savtchouk 1, Marshall Wilson 1, John D’Amico 1, Joseph N. Kochey 1, Dmitriy Marinskiy 1 and Jacek Lagowski 1 View Affiliations Hide
Accelerated Light-Induced Degradation (ALID) for Monitoring of...
www.springerprofessional.de
In crystalline silicon, above-bandgap illumination can transform defects into strong recombination centers, degrading minority-carrier lifetime and
DRIP XIII. 13th International Conference on Defects Recognition,...
docplayer.net
... Piotr Edelman 1 ; Alexandre Savtchouk 1 ; John D Amico 1 ; Jacek Lagowski 1 ; 1 SemilabSDI In crystalline silicon, above bandgap illumination can transform ...
(PDF) QSS-μPCD measurement of lifetime in silicon wafers: advantages...
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QSS-μPCD measurement of lifetime in silicon wafers: advantages and new applications
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Alexandre Savtchouk, John D'Amico, Igor Tasarov, Lubek Jastrzebski, and Jacek Lagowski; Manifestation of Cu Impurities on Silicon Surfaces, Implication for Monitoring
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