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	Tohoku University Associate Professor Professor Hideo Ohno Spin-Orbit Hisanao Akima Horio Ikeda Michihiko Naoki

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A new-structure magnetic memory device developed

phys.org

· The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has developed a new-structure magnetic …

A step on the road to spintronics

www.electronicsweekly.com

A Japanese team might have found a route to low-power spintronics, and even analogue spintronics, by lifting the lid on anti-ferromagnetic materials and st

New physics and application of antiferromagnet uncovered

www.chemeurope.com

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has studied the control of magnetization using a...

Understanding creep in semiconductors compared with metals -...

www.materialstoday.com

Understanding creep in semiconductors compared with metals

Network Profiles

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Facebook: Shunsuke Fukami | Facebook

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Facebook: Shunsuke Fukami (深見駿介) | Facebook

Shunsuke Fukami is on Facebook. Join Facebook to connect with Shunsuke Fukami and others you may know. Facebook gives people the power to share and makes the world ...

Interests

A new-structure magnetic memory device develo | EurekAlert!

www.eurekalert.org

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has developed a new-structure magnetic memory device...

A new-structure magnetic memory device developed -- ScienceDaily

www.sciencedaily.com

Engineers have developed a new-structure magnetic memory device utilizing spin-orbit torque-induced magnetization switching.

The world's first demonstration of spintronic | EurekAlert!

www.eurekalert.org

Researchers at Tohoku University have, for the first time, successfully demonstrated the basic operation of spintronics-based artificial intelligence.

Education

Spintronics based random access memory: a review - Research Database,...

pure.york.ac.uk

... of the future technologies that might help the industry to move beyond the conventional MRAM technology are discussed at the end of the paper, followed by a summary and an outlook.",. author = "Sabpreet Bhatti and Rachid Sbiaa and Atsufumi Hirohata and Hideo Ohno and Shunsuke Fukami and S.N. Piramanayagam",.

Scientific Publications

dblp: Shunsuke Fukami

dblp.uni-trier.de

List of computer science publications by Shunsuke Fukami

dblp: Hideo Sato

dblp.org

List of computer science publications by Hideo Sato

Reports & Statements

Layer thickness dependence of the current-induced effective field...

www.nature.com

Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two...

Schloss Dagstuhl : Participant List

www.dagstuhl.de

... Ayse Coskun (Boston University, US) [dblp] · Suman Datta (University of Notre Dame, US) [dblp] · Erik P. DeBenedictis (Sandia National Labs – Albuquerque, US) [dblp] · Gianluca Fiori (University of Pisa, IT) [dblp]; Shunsuke Fukami ( Tohoku University, JP) [dblp] · Balazs Gerofi (RIKEN – Kobe, JP) [dblp] ...

Magnetization switching by spin–orbit torque in an...

www.nature.com

Antiferromagnet/ferromagnet bilayers are shown to exhibit large enough spin–orbit torque to switch the magnetization of the ferromagnetic layer without the...

Miscellaneous

MRAM AND DATA READ/WRITE METHOD FOR MRAM - Patent application

www.patentsencyclopedia.com

Patent application title: MRAM AND DATA READ/WRITE METHOD FOR MRAM Inventors: Shunsuke Fukami (Tokyo, JP) Naoki Kasai (Tokyo, JP) Assignees: NEC Corporation

Electron Tomography of Nano-Magnetic Materials Less Than 1 nm...

www.cambridge.org

Electron Tomography of Nano-Magnetic Materials Less Than 1 nm Resolution - Volume 10 Issue S02

Shunsuke Fukami | Meiji University - Academia.edu

sauvage.academia.edu

Academia.edu is a place to share and follow research.

au:Fukami_S in:cond-mat - SciRate Search

scirate.com

Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer torque and high thermal stability, along with a continuous reduction of junction ...

A New-Structure Magnetic Memory Device Developed | Electrical...

www.eeworldonline.com

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has developed a new-structure magnetic memory device...

Analysis of Influence and Contribution on Distribution System under...

www.davidpublisher.com

David-desc

IEICE Technical Report, vol 117, no 247, 2017

www.ieice.org

Hisanao Akima, William Borders, Shunsuke Fukami, Satoshi Moriya, Shouta Kurihara, Aleksandr Kurenkov, Yoshihiko Horio, Shigeo Sato, Hideo Ohno ( Tohoku Univ.) pp MR Domain wall motion control in the Co/Ni- nanowire-based magnetic shift register. Tsuyoshi Kondo, Takuya Shimada, Masaki Kado, ...

Plenary / Invited Speakers – ICDS 2017

www.icds2017.org

... of Illinois at Urbana-Champaign, USA, “Recent developments in modeling of defects in semiconductors: High-accuracy, diffusion, and stochastic error quantification”. Shunsuke Fukami, Tohoku University, Japan, “Spin-orbit torque memory devices for integrated-circuit applications”. Mitsuru Funato, Kyoto University, Japan,

Process-induced damage and its recovery for a CoFeB–MgO magnetic...

www.growkudos.com

Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis. Keizo Kinoshita, Hiroaki Honjo, Shunsuke Fukami, Hideo Sato, Kotaro Mizunuma, Keiichi Tokutome, Michio Murahata, Shoji Ikeda, Sadahiko Miura, Naoki Kasai, Hideo Ohno. Japanese Journal of ...

Scientific program – ICMFS-2018

icmfs2018.physics.ucsc.edu

Adekunle Adeyeye, Singapore; Andrii Chumak, Germany; Vincent Cros, France; Alina Deac, Germany; Claire Donnelly, Switzerland; Amalio Fernandez-Pacheco, UK; Shunsuke Fukami, Japan; Marie Herve, Germany; Sara Majetich, USA; Denys Makarov, Germany; Stephane Mangin, France; Shinji Miwa, Japan; Martina ...

Test Article

www.psmfco.com

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has studied in detail, a slow change of micros...

The Magnetic Appeal Of Spin-Orbit Memory - Asian Scientist Magazine

www.asianscientist.com

Researchers in Japan have succeeded in developing a new-structure magnetic memory device using spin-orbit torque-induced magnetization switching. The work, led by Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University, was published in Nature Nanotechnology.

Verhandlungen der Deutschen Physikalischen Gesellschaft

www.dpg-verhandlungen.de

10:45, MA 39.6, Description of electron transport in multilayer systems using Boltzmann approach — •Ondřej Stejskal, André Thiaville, Shunsuke Fukami, Hideo Ohno, and Jaroslav Hamrle. 11:00, MA 39.7, Higher order contributions to Anisotropic Interface Magnetoresistance (AIMR) in Ni/Pt thin films — •Afsaneh Farhadi, ...

World’s first spintronics-based artificial intelligence –...

www.nextbigfuture.com

The Tohoku University research group of Professor Hideo Ohno, Professor Shigeo Sato, Professor Yoshihiko Horio, Associate Professor Shunsuke Fukami and Assistant Professor Hisanao Akima developed an artificial neural network in which their recently-developed spintronic devices, comprising ...

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