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US Patent Issued to Furukawa Electric on May 20 for "GaN-Based...
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ALEXANDRIA, Va., May United States Patent no. 8,729,603, issued on May 20, was assigned to... | Article from US Fed News Service, Including US State News...
Network Profiles
LinkedIn: Nariaki IKEDA - LinkedIn
世界最大のプロフェッショナルコミュニティであるLinkedInでNariaki IKEDAさんのプロフィールを表示Nariakiさんのプロフィールには1の求人が掲載されています。LinkedIn ...
Interests
Nariaki Ikeda - Patents
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Nariaki Ikeda patents. Recent bibliographic sampling of Nariaki Ikeda patents listed/published in the public domain by the USPTO (USPTO Patent Application # ...
Business Profiles
patentbuddy: Nariaki Ikeda
THE FURUKAWA ELECTRIC CO., LTD., Tokyo, JP
Education
IEICE Trans - Low On-Voltage Operation AlGaN/GaN Schottky Barrier...
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Seikoh YOSHIDA Nariaki IKEDA Jiang LI Takahiro WADA Hironari TAKEHARA Publication IEICE TRANSACTIONS on Electronics Vol.E88-C No.4 pp
IEICE SEARCH SYSTEM
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Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure. Seikoh YOSHIDA. †a). , Member, Nariaki IKEDA. †. , Jiang LI. †.
Books & Literature
学术圈 – Nariaki Ikeda
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High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique · Hiroshi Kambayashi , Yoshihiro Satoh ...
ken-system: - All Technical Committee Conferences - All Years
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... Nariaki Ikeda, Sadahiro Kato : In this paper, AlGaN/GaN/HFET devices on Si substrates were fabricated, and the device characteristics were examined.
Japan's Economic Planning and Mobilization in Wartime, 1930s–1940s:...
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Although most economists maintain a mistrust of a government's goals when it intervenes in an economy, many continue to trust its actual ability. They retain,...
Japan's Economic Planning and Mobilization in Wartime, ...books.google.com.au › books
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,p.114); they obtained the support ofkey business personalities, including Nariaki Ikeda and Toyotaro Yuuki, fortheir FiveYear Plans (Hara, 1994,p.78).
Related Documents
Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual...
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@article{YoshidaILWT05, title = {Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure}, author = {Seikoh Yoshida and Nariaki Ikeda
Secretaria Geral de Administração Departamento de Recursos Alesp
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Nome. OSVALDO NARIAKI IKEDA. Cargo Atual. Lotação Atual. Ex-funcionário. Ex-funcionário. Salário. A divulgação da remuneração dos servidores ativos (e ...
Enhancement mode normally-off gallium nitride heterostructure field...
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A method of fabricating a normally “off” GaN heterostructure field effect transistor having a source and a drain including depositing a passivation layer...
上杉鷹山 [WorldCat Identities]
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Yōzan-kō seiki by Nariaki Ikeda ( ) Shōsetsu Uesugi Yōzan by Fuyuji Dōmon ( Book ) Uesugi Yōzan no ningen to shōgai by Kōjirō Abiko ( Book ) "Meikun" no kinsei : gakumon, chishiki to hansei ...
Scientific Publications
DBLP - Yuki Nomura
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Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, Yoshihiro Sato, Takehiko Nomura, ... Sadahiro Kato, Seikoh Yoshida : GaN Power Transistors on Si ...
Journal of Clinical Epidemiology | Vol 44, Issue 11, Pages
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The online version of Journal of Clinical Epidemiology at ScienceDirect.com, the world's leading platform for high quality peer-reviewed full-text journals.
dblp: Proceedings of the IEEE, Volume 98
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Bibliographic content of Proceedings of the IEEE, Volume 98
Publications
Nariaki Ikeda
spie.org
SPIE Profile of Nariaki Ikeda, Furukawa Electric Co Ltd. SPIE Profiles is a networking platform for optics and photonics professionals.
Reports & Statements
Wikipedia: Ikeda Shigeaki — Wikipédia
Fils d'un samouraï nommé Ikeda Nariaki, Ikeda Shigeaki est né en dans le domaine de Yonezawa (actuelle préfecture de Yamagata).
Current-Voltage Characteristics and Transconductance of Undoped...
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References: Takehiko Nomura, Hiroshi Kambayashi, Mitsuru Masuda,Sonomi Ishii, Nariaki Ikeda, Jiang Lee, and Seikoh Yoshida IEEE ...
老瑞大阪生活 ep6: 野球小粉絲-陽岱鋼朝聖之旅 Smoky~督西督西!!! @ ☆ 나의 16 차원 일상생활...
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EP6 京セラドーム大阪 : 歐力士野牛 VS 北海道日本火腿戰士 直接轉貼FACEBOOK的文章記錄: 今天真的是太值得了 這次再次謝謝熱情的大阪人ㅠㅠ我們幾個台灣小女子
Miscellaneous
Nariaki IKEDA | LinkedIn
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View Nariaki IKEDA's professional profile on LinkedIn. LinkedIn is the world's largest business network, helping professionals like Nariaki IKEDA discover inside ...
US A1 - Insulating gate AlGaN/GaN HEMT Google...
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Nariaki Ikeda: GaN-BASED SEMICONDUCTOR ELEMENT: US * 6 ott 2009: 8 apr 2010: Bin Lu: Enhancement-mode nitride transistor: US * 3 gen 2011: 5 mag
US A1 - GaN based semiconductor element ...www.google.je › patents
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Inventor: Shusuke Kaya: Seikoh Yoshida: Sadahiro Kato: Takehiko Nomura: Nariaki Ikeda: Masayuki Iwami: Yoshihiro Sato: Hiroshi Kambayashi: Yuki Niiyama ...
Consulta pública de pessoas - Osvaldo Nariaki Ikeda
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Saiba Como consultar documentos de Osvaldo Nariaki Ikeda de forma gratuita e on-line, como Endereço, CPF, RG, CNH, Passaporte, SPC, SERASA SCORE, ...
Nariaki Ikeda, Tokyo JP - Patent applications
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Patent application number, Description, Published , GaN-based semiconductor device and method of manufacturing the same - A GaN-based ...
224th ECS Meeting (October 27 – November 1, 2013): GaN ...
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High Performance Normally-off GaN MOSFETs on Si Substrates Hiroshi Kambayashi, Ph. D, Furukawa Electric Co., Ltd.; Nariaki Ikeda, Furukawa Electric Co., Ltd ...
US B2 - Semiconductor device and method for ...www.google.com › patents
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Inventor: Nariaki Ikeda: Shusuke Kaya; Current Assignee. The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no ...
US A1 - GaN-BASED SEMICONDUCTOR ELEMENT Google...
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Inventors, Nariaki Ikeda, Seikoh Yoshida, Masatoshi Ikeda. Original Assignee, Nariaki Ikeda, Seikoh Yoshida, Masatoshi Ikeda. Export Citation ...
Abstract: High Performance Normally-off GaN MOSFETs on Si Substrates...
ecs.confex.com
224th ECS Meeting (October 27 – November 1, 2013) October November 01, Menu. Search. Browse Nariaki Ikeda , Furukawa Electric Co., Ltd. Takehiko ...
Effects of the high-refractive index SiNx passivation on AlGaN/GaN...
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Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current - Volume 892
High-power AlGaN/GaN HFETs on Si substrates for power ...
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Nariaki Ikeda, Jiang Lee, Syuusuke Kaya, Masayuki Iwami, Takehiko Nomura, Sadahiro Katoh Author Affiliations + Nariaki Ikeda, 1 Jiang Lee, 1 Syuusuke Kaya, 1 …
WO A1 - Group iii-v nitride compound semiconductor device...
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Disclosed is a group III-V nitride compound semiconductor device. Specifically disclosed is a group III-V nitride compound semiconductor device, in...
US B1 - Enhancement mode normally-off gallium nitride...
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A method of fabricating a normally “off” GaN heterostructure field effect transistor having a source and a drain including depositing a passivation layer...
An Analytical Charge based Drain Current Model for Insulated Gate...
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An Analytical Charge based Drain Current Model for Insulated Gate Undoped AlGaN/GaN Heterostructure
High Power AlGaN/GaN Schottky Barrier Diode with V Operation |...
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High Power AlGaN/GaN Schottky Barrier Diode with V Operation - Volume Seikoh Yoshida, Nariaki Ikeda, Jiang Li, Takahiro Wada, Hiroshi Kambayashi,...
US B2 - Silicon nitride passivation with ammonia plasma...
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This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron...
US B2 - GaN semiconductor device having a high withstand...
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A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in...
US B2 - Semiconductor device - Google Patents
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US A1 * Nariaki Ikeda GaN-BASED SEMICONDUCTOR ELEMENT. US A1 *
GaN epitaxial layers
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High power AlGaN/GaN HFETs on 4 inch Si substrates PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S Nariaki Ikeda
GaN-based semiconductor device and method of manufacturing the same -...
www.patentsencyclopedia.com
Patent applications by Nariaki Ikeda, Tokyo JP. Patent applications by Sadahiro Kato, Tokyo JP. Patent applications by Seikoh Yoshida, Tokyo JP.
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