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Nitride HEMTs with 245GHz cut-off - Semiconductor Today

www.semiconductor-today.com
in the USA have produced gallium nitride (GaN) semiconductor high-electron-mobility transistors (HEMTs) with indium aluminum nitride (InAlN) barriers that achieve cut-off frequencies (fT) of 245GHz [Dong Seup Lee et al, ...

Artist Ikko Tanaka's work shows design as a primer on culture - Los ...www.latimes.com › tn-gnp-design-as-a-primer-on-culture story

www.latimes.com
Apr 16, · Her emphasis is on Korean art, specifically artist Jung Seup Lee. That focus gives her an interesting perspective on Tanaka. “There was a ...

Semiconductor Today

www.semiconductor-today.com
21 October Back-barrier boosts nitride HEMT cut-off frequency. Massachusetts Institute of Technology, IQE RF LLC and University of Notre Dame have used an indium gallium nitride (InGaN) back-barrier to control short-channel effects (SCEs) in indium aluminum nitride/gallium nitride (InAlN/GaN) high-electron-mobility transistors (HEMTs) “for the first time” [Dong Seup Lee et al, IEEE ...
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